| abstract |
The invention relates to a method of producing films from oxides, nitrides or oxynitrides of metals or semiconductors on a substrate by means of an ECO method, comprising the following steps: (i) ensuring the availability of a low-pressure ECO device that includes at least one plasma source that contains at least one electrode connected to an AC power source, DC generator or pulsed DC generator for deposition by deposition of said films on a substrate, and (ii) the supply of electrical energy to the source plasma and feeding the substrate precursor gas oxide film prepared from oxides, nitrides or oxynitrides of metals or semiconductors, and the reaction gas prepared from oxygen, Oxygen derivatives or derivatives of nitrogen. The invention also relates to a method for producing films of oxides, nitrides or oxynitrides of metals or semiconductors. |