| abstract |
The object of the present invention is a method of processing at least one thin continuous layer deposited on the first surface of the substrate, characterized in that said at least one thin layer is brought to a temperature equal to at least 300 ° C, maintaining the temperature less than or equal to 150 ° C, at the level of the surface of the specified substrate, opposite to the specified first surface, in order to increase the degree of crystallinity of the said thin layer, keeping it solid and bypassing the melting stage of the thinly th layer. The object of the invention is also a material that can be obtained by this method. |