http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4445553-A1

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filingDate 1994-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5df761cfd1e33480f7b07511c99e56d6
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publicationDate 1995-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-4445553-A1
titleOfInvention Semiconductor acceleration sensor
abstract The accelerometer has a p-type Si substrate with an elongated rectangular area (3) free from the SiO2 or Si3N4 film which insulates it from a poly-Si cantilever-structured movable electrode (4) with a contact hole (7) for connection to A1 wiring (6). Fixed electrodes self-aligned on both sides of the movable electrode are formed of impurity diffusion layers (8,9) connected to ion-implanted lines (10,11) also having contact holes (12,14) and wiring (13,15). The acceleration is determined from the fluctuation of current between the fixed electrodes.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8975669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102164848-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10019408-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9764941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012202783-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6724023-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19930779-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012216493-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010034552-A2
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priorityDate 1993-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.