http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4443915-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 |
| filingDate | 1994-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3da467c8a90ef620e6fd4ad617e3b3e6 |
| publicationDate | 1995-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4443915-A1 |
| titleOfInvention | Semiconductor device and method for its production |
| abstract | Semiconductor device comprises: (a) a substrate having a main surface; (b) a collector doping region of a 1st conducting type (3,5,7) formed on the main surface of the substrate; (c) a base doping region of 2nd conducting type (9,11) formed on the main surface of the substrate within the collector doping region; and (d) an insulating layer (73) formed on the base doping region and having an opening (73a) which reaches one section of a main surface of the base doping region. A groove (15) is formed on the main surface of the substrate within the base doping region so that it is located below the opening and extending from a lower end of the opening up to the base surface of the insulating layer. The appts. further comprises: (e) an emitter doping region of a 1st conducting type (13) formed on the base surface of the groove in the base doping region; and (f) a sidewall insulating layer (17) covering the surface of the groove located below the insulating layer so that one section of a surface of the emitter doping region is exposed. Prodn. of the device is also claimed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19836032-B4 |
| priorityDate | 1993-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.