http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4438616-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| filingDate | 1994-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1522ff0ff9e2edc36a64801fdb9bf3c8 |
| publicationDate | 1995-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4438616-A1 |
| titleOfInvention | Phase shift mask and method of making it |
| abstract | The invention relates to a phase-shift mask and to a process for the production thereof. In order to overcome the problem of a photoresist film being removed by a certain thickness in a region not exposed to the light which occurs when the conventional half-tone phase-shift mask is used to form the photoresist film pattern, the phase-shift mask of the invention comprises a lower, opaque film and a phase-shift film which is laminated onto an opaque substrate in a predetermined region not exposed to the light, where the lower, opaque film has a certain degree of light transparency or is partially transparent to light, and an upper opaque film formed on the phase-shift film. |
| priorityDate | 1993-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.