http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4430812-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate | 1994-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1995-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0789838ce6cd6c4d1d10999457963ff5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a265257a8b6975a1d8bba083b8adbf5e |
| publicationDate | 1995-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4430812-C1 |
| titleOfInvention | Method for producing an ion-sensitive field-effect transistor with rear-side contact |
| abstract | Prodn. of an ISFET with back face contacts involves (a) structuring a source region (6,22), a drain region (8,24) and an ion-sensitive gate region, in an active region (14) between the source and drain regions, at the front face (VS) of a substrate (2); (b) depositing a silicon oxide-silicon nitride double layer (16,18) as gate insulator and then a first silicon carbide layer (30) on the front face (VS); (c) structuring a back face (RS) insulation layer (12) to define contact hole regions opposite the source and drain regions; (d) depositing and structuring a second silicon carbide layer on the back face (RS); (e) etching trenches (36) extending from the contact hole regions towards the front face (VS); (f) introducing material of the same conductivity type as the source and drain regions, into substrate regions (38) adjacent to the trenches; (g) depositing conductor lines (40) on the substrate back face (RS) and in the trenches; and (h) removing the silicon carbide layer from t he front face (VS) at least in the ion-sensitive gate region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19816245-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6548391-B1 |
| priorityDate | 1994-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.