| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1dd98ad4ee076841fec541542f952f58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S505-814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S428-93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12743 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22F1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B1-023 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22F1-04 |
| filingDate |
1994-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9076f76605635cb5bd1fe6ba8a67d102
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39fc1df279b1106eb388a567164870da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fc140548204e88263a770cae7f3cc11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5eab7b0fc1dac2c3c92eea6fa799f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd92c7370ec9360606a42da41280a2c |
| publicationDate |
1995-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-4423539-A1 |
| titleOfInvention |
High-purity aluminum conductor at extremely low temperature |
| abstract |
The aluminium conductor increases little in the electrical resistance at extremely low temperature of 30 DEG K or below, even after a cyclic deformation at an extremely low temperature, by such a control of the crystal structure of the ultrapure aluminium conductor having a purity of 99.9 to 99.9999% by weight that it consists of (i) a pure monocrystal or a virtually pure monocrystal which consists of a bundle of subgrains whose crystal axes lie in the same direction or as a whole in the directions within several degrees of deviation and which has a specific crystal axis of <111> or <100> or crystal axes which lie in the vicinity in the longitudinal direction of the aluminium conductor, or (ii) a polycrystal where most of the grains have corresponding specific crystal axes of <111> and/or <100> or crystal axes which in relation to each grain are close together in the longitudinal direction of the aluminium conductor and have a specific particle size of 0.01 mm to 3.0 mm. |
| priorityDate |
1993-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |