| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
1994-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f564e927f2cf5cd62322770b970679 |
| publicationDate |
1995-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-4417966-A1 |
| titleOfInvention |
Process for modular contacting of multilayer semiconductor components |
| abstract |
In the modular contacting of multilayer semiconductor devices by means of a contact hole or via (1) in an insulation layer (20 between two device levels, the novelty comprises (a) completely filling the hole or via (1) by selective Al or Cu deposition; (b) applying a metallic layer (4) onto the insulation layer (2) and the Al or Cu deposit (5); and (c) adjusting the concn. equilibrium between the deposit (5) and adjacent metallic layers by heat treating the device, pref. at max. 450 deg.C during a further device mfg. step. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0805490-A1 |
| priorityDate |
1994-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |