http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4415955-C2

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 1994-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0852b5eef6c11617ee1b728e5183f41e
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publicationDate 2003-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-4415955-C2
titleOfInvention Method of manufacturing a semiconductor MOS transistor
priorityDate 1993-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457280508

Total number of triples: 16.