http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4402070-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbd7063eee731fa36db57b14b15418d3 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 1994-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fd9bd26892feaee82221dc632ecbc6a |
publicationDate | 1995-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-4402070-A1 |
titleOfInvention | Method for producing a silicide contact plug and component with one |
abstract | Prodn. of a silicide contact plug involves patterning an insulating film (62) on a substrate to form a via, depositing a silicon film over the entire structure to fill the via, back-etching the film to form a silicon contact plug, depositing a thin metal film over the entire structure, heat treating to form metal silicide and removing any unreacted metal to leave a silicide contact plug (67') in the via. The novelty is that the metal film is a platinum film. Also claimed is a semiconductor device with a platinum silicide contact plug. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0802563-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0802563-A2 |
priorityDate | 1994-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.