| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
1993-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c937053dff46fc168153828d66ea0b5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81781906134e447513851f3f65e14333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ddab7f73d4c4e82fe21ea751695f0cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4330bb3b6975bcedf49425ef0d8ff32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0868c46626567f530d780627ae93d8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4e4a0429466df1e0e488f2176cab62d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37aecfbccb94755f892f81e774d840d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b9d667cabe6e9065e108d9fc1aff38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33ff52b8e290942ae938132508e1d6c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4f8452aff5fbac9f694c8c721f0bf6b |
| publicationDate |
1996-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-4345236-C2 |
| titleOfInvention |
Semiconductor device and manufacturing method |
| abstract |
Semiconductor appts. has a connecting layer (6) on a semiconductor substrate (1) and having a pattern of graduated regions. An insulating Si type film (7) covers the connecting layer, with its surface showing reserved zones above the parts between the graduated regions of the pattern. A silicone ladder-type resin film (8) is used to equalise the depressions in the surface of the insulating film. An uninterrupted hole (7c) in the insulating film exposes the surface of the connecting layer. An upper conducting layer (22) is provided on the insulating film and is electrically connected to the lower connecting layer through the hole. The ladder-type resin is of formula (I), where R1 = at least one of phenyl or lower alkyl; R2 = at least one of H or lower alkyl; and n = 20-1000. |
| priorityDate |
1992-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |