| abstract |
In the process or the apparatus for depositing high-purity silicon on silicon particles, there is provided a moving-bed reactor which is divided into a heating zone and a reaction zone by means of a separation device. The silicon particles in the heating zone are fluidised by a carrier gas, for example hydrogen, and heated by means of microwaves. On the other hand, the reaction zone provided for the deposition of silicon, through which reaction zone the reaction gases including the silicon source flow, is heated by particle mixing occurring between the reaction zone and the upper region of the heating zone. The desired reaction temperature in the reaction zone can thus be kept stable without disrupting the microwave heating in the heating zone. |