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filingDate 1991-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f7350ebbcd3aab1e8124059b59d2b45
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publicationDate 1992-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-4135533-A1
titleOfInvention EPOXY RESIN COMPOSITIONS AND ENCLOSED SEMICONDUCTOR DEVICES
abstract Epoxide resin consists of (I) a mixt. of (a) an epoxide resin with at least 2 epoxide gps./mol. and (b) an epoxide resin (I) of the formula :. Glyc-(O-Phe-Phe-OCH2CH(OH)CH2-)n-O-Phe-Phe-O-Glyc. Glyc = glycidyl; Phe = a phenylene gp. with up to 4 halogen or 1-5C monovalent hydrocarbyl substits.; n = 0-5; in an (a)/(b) wt. ratio of 0/100 to 95/5, and (2) a phenolic resin, such that (pt. of) (a) and/or (2) contains (substd.) naphthalene ring(s). Pref. the naphthalene ring content of (1) and (2) is 5-80 wt.%. (1) and (2) are mixed in such amts. that the ratio of epoxy gps./phenolic OH gps. is 0.5-51.5. The compsn. may also contain 100-1000 wt.% inorg. filler w.r.t. (1) + (2). USE/ADVANTAGE - The compsn. is claimed for encapsulating semiconductor devices. It has better flow than usual and cures to prods. with low coefft. of expansion, high Tg, low stress, low elastic modulus, good adhesion and low moisture absorption. It can withstand thermal shock during assembly and is very reliable
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9508584-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5597876-A
priorityDate 1990-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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