http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4120417-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f09378c018e7719f171f7e91f2dd60fd |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0076 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D133-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D133-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 |
filingDate | 1991-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff394058ed68af5659fe6f9372942298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7790cef7a97fffb1cda24c9e8ea0cffb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5497df2c4e849052294f3e8fa375f64 |
publicationDate | 1992-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-4120417-A1 |
titleOfInvention | PHOTO-SENSITIVE ELECTRODEPOSITION COATING OF THE POSITIVE TYPE |
abstract | Positive, light-sensitive, electro-pptn. coating masses contain (a) a photosensitive cpd. of mol. wt. not greater than 6000 comprising at least one modified quinonediazide sulphonic acid unit of general formula R1-N(R2)-R3-A- (I) (where R1 = a gp. of formula (II) or (III); R2 = H, alkyl, cycloalkyl or alkylether; R3 = alkylene, cycloalkylene or alkylene ether, and A = a carboxylic acid ester; and (b) a water-soluble or water-dispersible resin contg. a salt-forming gp.. (I) is pref. obtd. by reaction of poly-acid-chlorides with a hydroxyl-contg. quinonediazide of formula R1-N(R2)-R3-OH. The photosensitive cpd. (a) pref. contains, on average, 1-5 modified quinonediazide sulphonic acid units of formula (I) in each molecule, and (a) is pref. of mol. wt. not exceeding 5000. USE/ADVANTAGE - For prodn. of circuit photoresists for conductor plates for integrated switching circuits. The photoresists exhibit enhanced sensitivity to actinic rays, e.g. UV-light, and enhanced electro-pptn. bath stability. |
priorityDate | 1990-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 111.