http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4109533-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ef2930ecd6b298c1fafc95c26fd1fa1f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate | 1991-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc4a27b47c301d703cf1456d0cb8f065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f4a02df4b3fd32cb40c1b337d37e1de |
| publicationDate | 1992-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-4109533-A1 |
| titleOfInvention | PASSIVATED SEMICONDUCTOR COMPONENT |
| abstract | Within the Si body (1) a heavily p-doped region (22) borders on a lightly n-doped region (2) in which a more heavily doped planar region (4) is contacted by an anode (11). Sepg. diffusion regions (7) of p-type material extend right through the body (1) to a cathode (12). The SiOx layer (10), grown thermally on the Si, extends over the p-n junctions (6,8) and the transition (5) between the planar region (4) and n-region (2). The charge carrier density in this layer (10) is not more than 5 x 10 to power 11 per sq.cm. ADVANTAGE - Variability, differential thermal expansion and poor structurability of glass passivation layers are avoided. |
| priorityDate | 1990-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.