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filingDate 1991-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_166ffeb09bcfddf7cb509b9411cacd13
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publicationDate 1992-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-4107926-A1
titleOfInvention PLASMA RESISTANT, POSITIVE WORKING PHOTOCOPYING LACQUER
abstract Lacquers acting as single-layer resists or as the top layer for two-layered systems, comprise a 1,2-naphthoquinone-2-diazide deriv., a phenol resin, an Si-contg. substd. benzoic acid and a solvent or solvent mixt. where the 1,2-naphthoquinone diazide deriv. comprises a cpd. of general formula (I) or (II) as well as a benzoic acid of general formula (III), and the amt. of the Si-contg. formula (III), and the amt. of the Si-contg. benzoic acid comprises 10-100 wt.% of the total wt. In the formula, a gp. of formula (IV). R= alkyl, and n= 0, 1 or 2. Compsn. is pref. 5-tris-(trimethyl silyloxy)-silyloxy -1,2-naphthoquinone- 2-diazide together with tris-(trimethylsilyl -methylbenzoic acid are used. USE/ADVANTAGE - Useful in photocopier lacquers (claimed) giving resistance to oxygen plasma, good compatibility with the photolacquer component and no impairment of the lithographic parameters of the photocopier lacquer. (4pp Dwg.No.0/0)
priorityDate 1990-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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