| abstract |
(A) Transparent electrode of conductive oxide, for photodiodes based on a Si:H for use in large area microelectronics, consists of a sequence of alternate high and low O2 content individual layers, pref. of In-Sn oxide, Sn oxide or Zn oxide. (B) Prodn. of a transparent conductive electrode of ITO, as in (A), involves forming the layer sequence by magnetron cathodic sputtering using an In-Sn alloy as target and Ar as sputtering gas in an oxygen-contg. atmos. ADVANTAGE - Electrode prodn. is compatible with the photodiode prodn. process, the electrode material has good structuring properties on a Si:H and the electrode has optimal transparency and conductivity after heat treatment. |