Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C27-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B37-04 |
filingDate |
1989-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_232c148cfadf7a394817b02a2f98789b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e6d58acb6b8a9c4af55d99a813cd626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e850b57bad842cf5a2be3f4d9d3f36d5 |
publicationDate |
1991-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-3937529-A1 |
titleOfInvention |
METHOD FOR CONNECTING A SILICON PART TO A GLASS PART |
abstract |
In order to be able to produce inexpensively the bond between a glass component and a silicon component in the manufacture of sub-assemblies in the planar-optics and/or micromechanics fields, the use of so-called anodic-bonding techniques calls for the glass component to be conventional flat glass, hardened, before bonding to the silicon component, in a salt bath, thus generating compressive stresses in the surface penetrating to a maximum depth of 20-40 mu m. These compressive stresses compensate for the tensile stresses produced by the bonding process. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4219132-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4409068-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4409068-C2 |
priorityDate |
1989-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |