http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3915321-C1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103 |
| filingDate | 1989-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00afe8d4222f03db081bfa2888b4fe1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d9a3c7dc6fc0f0f20440247601e8d88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eda6ae852ab9777bf6f572ddd822ae09 |
| publicationDate | 2000-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3915321-C1 |
| titleOfInvention | Method for forming a passivation area on a semiconductor device from a II-VI connection and application of the method |
| abstract | An IR photodiode 10 from Group II-VI has a passivation layer 16 which covers the least exposed surfaces of the p-n diode junction 15. The passivation layer is a compositionally graded layer of Group II atoms that are diffused into the surface of the p-n diode junction. The passivation layer has a larger energy band gap than the underlying diode material, whereby both holes and electrons are repelled from the surface of the diode, resulting in improved diode working characteristics. A cation substitution method according to the invention comprises the steps of preparing the surface to be passivated, e.g. B. by depleting an upper surface area of Group II atoms; Depositing a layer of Group II material over the depleted surface area; and annealing the deposited layer and the underlying group II-VI material so that atoms of the deposited group II layer diffuse into the underlying impoverished surface area and fill cation vacancies within the impoverished surface area. The resulting passivation layer is a compositionally graded layer with an energy band gap, the value of which gradually decreases as a function of depth from the surface until the band gap energy equals that of the underlying bulk material. The preparation of ... |
| priorityDate | 1988-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.