| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-071 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-14 |
| filingDate |
1989-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6508c1071aba3d176c1283fc6473b072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43ad032fcf96cf7f480e20638ffa9d6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cb8ef03e5199ff9e94bf256e2784190
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db68c6b83bc1f0a123d1f0931163059b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39b301d4f642de72cc4e671f0a44e3dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59bac960ce39f1f09f20218bc8058e8b |
| publicationDate |
2004-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-3905626-B4 |
| titleOfInvention |
Device for growing silicon crystals |
| abstract |
Apparatus for growing silicon single crystals by the Czochralski method, comprising: (a) a crucible (16) for receiving a silicon melt; (b) a puller (22) for pulling a crystal nucleus immersed in the silicon melt; (c) an oven (12) for receiving the crucible (16) with an upper wall, the upper wall having an opening located directly above the crucible (16); (d) a cooling bowl (20A) above the crucible (16) for cooling the silicon single crystal from a temperature of 1050-850 ° C in no more than 50 minutes, the cooling bowl being arranged around the silicon single crystal and a plurality projections (50) formed on its inner outer surface; (e) a secondary heater (64) for heating the silicon single crystal so that the residence time of the single crystal in a temperature range of 800-600 ° C. is at least two hours, the secondary heater (64) being attached to the furnace opening and above the cooling bowl (20 ) is arranged. |
| priorityDate |
1988-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |