Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
filingDate |
1989-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34372689e55328740bb5eb54210c7ac6 |
publicationDate |
1990-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
DE-3905149-A1 |
titleOfInvention |
POWER CIRCUIT WITH AN INTEGRATED CMOS OR BIPOLAR CIRCUIT AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT |
abstract |
In a power circuit with integrated CMOS or bipolar circuit which is arranged on a semiconductor island insulated by a buried insulation layer, improved electric strength and minimal crosstalk is achieved if the buried insulation layer lies in a semiconductor region whose doping is opposite to that in the semiconductor material adjacent to the semiconductor region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4143346-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5413313-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4201910-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4221039-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4100444-A1 |
priorityDate |
1989-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |