http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3831423-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_782b276beee7c34efe50183392517dfb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-087 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 |
| filingDate | 1988-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7545586ec8a80fe89b39173f86b7b67a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e8794107e923e21cf91e5f292df0388 |
| publicationDate | 1989-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3831423-A1 |
| titleOfInvention | METHOD FOR PRODUCING HIGH PURITY SILICON NITRIDE BY DIRECT REACTION BETWEEN ELEMENTAL SILICON AND LIQUID NITROGEN-HYDROGEN REACTIONS |
| abstract | A high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride is prepared by reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: NnH(n+m) wherein: n = 1-4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200-1700 DEG C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. |
| priorityDate | 1987-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.