http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3807788-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate | 1988-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_775887a125fd5a755e468cc149086a82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae763440021ddb2167b88bbc4521f7e |
| publicationDate | 1988-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3807788-A1 |
| titleOfInvention | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE |
| abstract | Semiconductor devices often have steps such as, for example, the gate electrode above an MOS transistor. Covering these steps with insulating films or other films is difficult since a thermal process has to be used. This thermal process has to be carried out at very high temperatures, which has adverse effects on the demarcation quality of the various layers. A process is to be provided in which it is to be possible to carry out step coverage more effectively. A layer is formed, on a principal surface of a semiconductor substrate (1), which successively comprises an oxide film (2), polysilicon (3) and a heat-resistant metal (4). The layer is patterned, a photolithographic technique being employed, in such a way that a gate electrode of an MOS transistor is formed. Ions are implanted in the semiconductor substrate, the gate electrode being employed as a mask, and an oxide film (6) is formed on this semiconductor substrate. An interlayer insulating film (7a) is formed on the entire surface of the oxide film (6), including the gate electrode, followed by the interlayer insulating film (7a) being irradiated with infrared rays (8) in such a way that its step coverage is improved. A gate electrode (3) formed from polysilicon is formed on the principal surface of the semiconductor substrate (1) by the oxide film (2). A heat-resistant metal is formed on the entire surface of the gate electrode, and ... Original abstract incomplete. <IMAGE> |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0376479-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5384288-A |
| priorityDate | 1987-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.