| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1987-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1991-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e16c3a35851d84901f2164182cc3298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05e620a7d33bb4e2326bc123e870811d |
| publicationDate |
1991-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-3774246-D1 |
| titleOfInvention |
METHOD FOR GENERATING A DEFINED ARSEN DOPING IN SILICON SEMICONDUCTOR SUBSTRATES. |
| abstract |
On a silicon wafer, in the surface of which moats have been etched with a high aspect ratio, an As-contg. glass is deposited by thermal decompsn. in the gasphase of tetra-ethyl-ortho-silicate (TEOS) and triethyl-arsenate (TEA): AsO(OC2H5)3. The decompsn. occurs at 650-750 deg.C and a pressure of 0.5-1.1 mbar. The gas-mixt. used comprises O2. |
| priorityDate |
1986-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |