http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3739417-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-68 |
| filingDate | 1987-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70befe3f1f81458cbe2f579b80481288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_062b5abf87c5f2beaa73f05084dee195 |
| publicationDate | 1988-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3739417-A1 |
| titleOfInvention | TRANSISTOR WITH INSULATED GATE AND INTEGRAL VERTICAL DIODE AND METHOD FOR THE PRODUCTION THEREOF |
| abstract | An improved lateral insulated gate transistor includes a dual function anode (30) and employs specially configured anode and cathode (40) regions within the drift layer to promote lateral current flow. A vertical diode (19) is disposed between a substrate cathode (20) and anode (30) of the device. Under forward bias conditions, the device exhibits conduction controlled by the insulated gate (60), and under reverse bias conditions, the device exhibits conduction between the substrate cathode and anode of the vertical diode. <IMAGE> |
| priorityDate | 1986-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099678 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6337007 |
Total number of triples: 18.