http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3231457-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1982-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0408491dd00494057cc4ae70f7c6d7ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eab0b947866e7de98059b48c4156a11a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36f36b76d12341dd61b0e666a90788a0 |
| publicationDate | 1984-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3231457-A1 |
| titleOfInvention | METHOD FOR GENERATING STRUCTURES FOR INTEGRATED SEMICONDUCTOR CIRCUITS BY REACTIVE ION NETWORKING |
| abstract | The process of the invention uses as the mask (2) negative lacquer structures (2) produced by electron-beam writing, and, before the reactive ion etching of the structures (1,4) which, for example, serve as conductor patterns, an additional dry etching process is carried out for a short time in an oxygen atmosphere at low pressure and in the same parallel plate reactor in order to produce steep lacquer flanks (2). This provides the possibility of shortening the conductor structures (1,4) anisotropically, i.e. without undercutting. The process is applied in the metallisation of integrated circuits by electron-beam writing. <IMAGE> |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5171718-A |
| priorityDate | 1982-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.