http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3146149-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec120db746f2304879cd949c026e98ca |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 |
| filingDate | 1981-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20376080002301f175eed21b9129a177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b38ee03843de6988eba723540f12d7d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bde2311f4b2b4ffb334165844a4c2ecb |
| publicationDate | 1983-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3146149-A1 |
| titleOfInvention | EXPOSURE MASK FOR THIN LAYER TECHNOLOGY |
| abstract | The invention relates to an exposure mask for thin-film technology, in particular for structuring semiconductor components. The object of the invention is to produce semiconductor structures with high structural precision and component density at low cost. The invention proposes producing the structure-determining layer of an exposure mask for thin-film technology from amorphous carbon. The amorphous carbon layer is produced by already proposed ion-assisted vacuum coating processes. The advantage of the inventive achievement is that the carbon layer has favourable transmission and blocking properties for visible light or UV light. Furthermore, the structure is extremely abrasion-resistant and line widths of down to 1 mu m are achieved. |
| priorityDate | 1981-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.