http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3139803-C2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-10778 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-107 |
| filingDate | 1981-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1984-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1984-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3139803-C2 |
| titleOfInvention | Process for cleaning chlorosilanes |
| abstract | The present invention deals with the purification of chlorosilanes. According to the claimed process, both traces of boron compounds can be removed from the chlorosilanes, so that these can be used for the direct production of semiconductor silicon, as well as traces of heavy metal impurities. The removal of these heavy metal traces is particularly important when cleaning tetrachlorosilane if this is to be used for the production of optical fibers. According to the claimed process, the chlorosilanes are brought into intimate contact with compounds which have an Si-O-Si group in the presence of small amounts of hydrogen halide and the chlorosilane is then distilled off. According to the invention, the compounds which contain an Si-O-Si group include chlorosiloxanes and finely divided SiO ↓ 2. These compounds can also be generated in situ by adding hydrochloric acid to the chlorosilane. |
| priorityDate | 1980-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.