| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0376 |
| filingDate |
1981-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1985-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1985-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-3135393-C2 |
| titleOfInvention |
Photosensitive, amorphous silicon alloy, its use and a method for its production |
| abstract |
The production of improved photosensitive amorphous alloys and components with improved wavelength threshold value characteristics is achieved by adding one or more elements which serve to adjust the band gap to the alloys. The addition takes place at least to the active light-sensitive areas of the silicon and fluorine and preferably also hydrogen-containing amorphous components, one of the setting elements being germanium, which reduces the band gap, and further setting elements such as tin can be used. The silicon and the adjustment elements are combined at the same time and applied as amorphous alloys. By adding one or more setting elements, the band gap is set to a selected optimal wavelength threshold value for a specific component, whereby the light absorption efficiency increases and thus the light sensitivity of the component is increased without further states occurring in the band gap that could cause the Would reduce efficiency. The adjustment elements can be added in varying amounts, in layers, or in substantially constant amounts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3135411-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3135353-A1 |
| priorityDate |
1980-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |