http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3109728-C2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F226-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F226-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-012 |
| filingDate | 1981-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1986-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1986-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-3109728-C2 |
| titleOfInvention | Process for the production of resist structures |
| abstract | The invention relates to a method for producing resist structures from electron or X-ray negative resists based on polyvinyl carbazole and has the task of designing a method of this type in such a way that both high sensitivity and high contrast can be achieved . The invention provides for the use of copolymers or terpolymers of the following structure as resist material: (formula) where n + m is 1 and the following applies to the radicals R, X, Y and Z: R = H, halogen (F, Cl, Br, J), -CH ↓ 2-halogen or -CH ↓ 2-CH ↓ 2-halogen (radicals R are identical or different); X = H, CH ↓ 3 or C ↓ 2H ↓ 5; Y = H, Cl or Br, where the radicals Y can be identical or different; and Z = O or S. The method according to the invention is particularly suitable for producing resist structures by means of direct electron beam writing. |
| priorityDate | 1981-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.