http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3100288-C2

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
filingDate 1981-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1985-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1985-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-3100288-C2
titleOfInvention Integrated semiconductor circuit arrangement with connecting line
abstract P-type potential well regions are arranged in a surface region of an n-conductive silicon substrate of an integrated semiconductor circuit, the p-conductive potential pot regions being arranged in the form of islands and various semiconductor elements being formed in the p-conductive potential pot islands. The substrate surface area between the p-type potential well islands is filled with a depletion layer, and a connecting layer is arranged with the interposition of an insulating film on the separating area which contains the depletion layer.
priorityDate 1980-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 21.