http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3100288-C2
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
filingDate | 1981-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1985-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1985-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-3100288-C2 |
titleOfInvention | Integrated semiconductor circuit arrangement with connecting line |
abstract | P-type potential well regions are arranged in a surface region of an n-conductive silicon substrate of an integrated semiconductor circuit, the p-conductive potential pot regions being arranged in the form of islands and various semiconductor elements being formed in the p-conductive potential pot islands. The substrate surface area between the p-type potential well islands is filled with a depletion layer, and a connecting layer is arranged with the interposition of an insulating film on the separating area which contains the depletion layer. |
priorityDate | 1980-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 21.