| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e07faa0fc2020fa61c4a699e05af9c3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03G16-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03G16-00 |
| filingDate |
1980-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_401eaf604d8af156b6d4eef070d7595a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f84c944f8b27a23ce29576e6008e31f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7da8427908e0342134bb5603b952db92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fc8c5316c332637b61a9fb6cb2fb36a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c03e1084809b9a783ee2d061edd8a36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_529c306bc27b86ec9798663973fd523f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d04ac295ee076e8d07f4e7ea67a7f04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1fd65a6dbf9c29dc674fe1a94637c2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9565e77681d22a4c650d45f90cf1d90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c93bf14337095e27d85e76b74f79a96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4be490bee23076abe58094b76f6eb57f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df0cfc50ad5322d75bedfacf6b8bf3b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9501219a7552b043b8edcb909aa1b163 |
| publicationDate |
1981-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-3012360-A1 |
| titleOfInvention |
PHOTOTHERMOPLASTIC RECORDING METHOD FOR OPTICAL INFORMATION AND INFORMATION CARRIERS FOR THEIR REALIZATION |
| abstract |
Photothermoplastic recording process for optical information uses an information carrier with a semiconductor sensitive to actinic radiation and a thermoplastic storage layer. The process involves charging, exposure, thermal development and cooling of the carrier to fix a visible image. The thermoplastic layer is preheated to a temp. between its Tg and flow temp., which is maintained until the end of thermal development, then the carrier is charged to potentials ensuring an electric field strength producing pondermotive forces in the thermoplastic layer ca. 5-10% below the shear modulus of this material at the recording temp. At the same time, the optical information is exposed at a strength of illumination which changes the resistance of the semiconductor layer by 10-15 times at the points with max. exposure. The charging and exposure times are determined from the formula ts=tm(tau)(In k)/(k-1) (in which ts is the charging time and tm the exposure time. tau is the dark relaxation time for a charge on a carrier. k is a multiple of a photosignal on a semiconductor layer at a max. exposure point). Half tone pictures can be produced without special rastering with a great signal-to-noise ratio for small exposure times. |
| priorityDate |
1980-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |