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publicationDate 1980-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-2916080-A1
titleOfInvention METHOD FOR VACUUM EVAPORATING SEMICONDUCTOR LAYERS AND DEVICE FOR CARRYING OUT THIS METHOD
abstract Appts. includes several evaporators, which are heated to below the b.pts. of the materials being evaporated. Working surface of each evaporator is fed with a dose of a material, and the dose is completely evaporated in a time (T). Evaporators are fed with doses of materials in the time sequence T/n, where n is the number of evaporators. Pref. appts. includes a rotary doser contg. recesses located at 360 degrees/n intervals round a rotating shaft. Homogeneous deposits, e.g. of arsenic sulphide and/or selenide, can be obtd. on wide, flexible strip or foil fed continuously through the appts.
priorityDate 1979-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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