http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-2816409-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38843f1f8e20a22b10c22b73c71ff67c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1978-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32e7ba0364edd290924bc7a8c2429470 |
| publicationDate | 1979-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-2816409-A1 |
| titleOfInvention | MEASURING METHOD FOR AREA DETERMINATION OF THE RELATIONSHIP BETWEEN SPECIFIC RESISTANCE AND LAYER THICKNESS OF THIN SEMICONDUCTOR LAYERS WITH SCHOTTKY CONTACT BEHAVIOR |
| abstract | The measurement system uses four contact needles located on a circle of arbitrary radius whose presence against the semiconductor results in Schottky contact junctions. Before measurement is made, a fifth resistive contact is attached to the edge of the semiconductor, e.g. by alloying. Whilst measurements are being made, a current is supplied via this fifth contact to overcome the otherwise unavoidable reverse biasing effect of two consecutive Schottky junctions in the same measuring circuit. After measurement, the fifth contact is etched away and the semiconductor's mfg. process continued. |
| priorityDate | 1978-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104727 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583196 |
Total number of triples: 15.