| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9ee1cd30c7b0c3ac824db992572eb7d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66954 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-339 |
| filingDate |
1977-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4937e5df375305349c52d259d49d0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18ab3d609e572fb71849a21f882b7c8e |
| publicationDate |
1978-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-2746224-A1 |
| titleOfInvention |
METHOD OF MANUFACTURING A TWO-PHASE CHARGE SHIFTING ARRANGEMENT |
| abstract |
The device has a buried channel and implanted barriers. After production of a first gate oxide layer and a first Sigate plane, barriers are self-adjustingly implanted through spacings between these gate electrodes. A second gate oxide layer and a second Si-gate are then produced over the spacings in the first plane, so that a uniform thin gate oxide layer lies between the Si-gate of the two planes. Si-gates of the second plane, centred over the spacings in the first Si-gate plane, partly overlap the first plane gates. |
| priorityDate |
1976-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |