| abstract |
Semiconductor has a multi-layer ohmic terminal contact on a p-type relatively weakly doped zone, which is exposed to high temps. on encapsulation in a (glass) housing, the contact consisting of an Al layer next to the p-zone, then a Ti, ni or Cr layer and finally a Ag layer. There can also be a Pd or Rh layer just below the Ag layer. Used for DH diodes (claimed) and also for h.f. control avalanche and Zner diodes, transistors and integrated circuits. The contact can withstand the high temps. involved and is suitable for contacting relatively weakly doped p-zones. The (300 angstroms) Al layer is alloyed with the surface of the p-zone and the other metal layers are evapd. onto the semiconductor. |