| abstract |
Prodn. of a miniature electrode array on chalcogen semi-conductors (pref. CdS, CdSe, CdTe, SeTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe) to give inter-electrode distances of 0.01-0.1mm and sensitivities 2-200 times better than conventional photoconductors. CdS is doped with Cu using CdCl2 as a flux and the milled powder is deposited on an alumina substrate and heated in nitrogen at 600 degrees C to form a layer of photoconducting matl. A photosensitive resin layer is then deposited and exposed using a glass mask with e.g. Kodak HRP (RTM). After development in trichloroethane, Sn is deposited on the substrate, after which immersion in dichloromethane removes the areas coated with resin. The result is e.g. an array of Sn electrodes with inter-electrode distance of 0.05 mm and an electrode width of 0.1 mm. |