| abstract |
Coatings, pref. of glass or silica, are etched in a CF4 plasma environment. A photoresist material is applied to the coating and masked, then the structure is placed in a chamber which can be evacuated. After evacuating to 10-1 torr and residual O2 insufficient to attack the photoresist coating, CF4 is introduced into the chamber to 8 x 10-1 torr and a plasma is prod. by h.f. energy. The technique can be used in the prodn. of I.C.s, only a simple mask being needed. |