| abstract |
A Si or Ge cpd. is deposited on the surface of a solid article by pyrolytic deposition from the gas phase in a horizontal reactor, which is heated in such a way that the pyrolytic reaction occurs in the entire reaction chamber and, in addn., the reaction gases entering the chamber are heated. Regulated and uniform growth rate can be achieved during simultaneous coating of several articles and the coatings have reproducible and adjustable mechanical and electrical values. SiO2, GeO2, Si3N4 and Ge3N4 can be produced, using SiH4, SiCl4, SiBr4 or GeH4 with O2, Co2, NH3 or N2H4. |