| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac5da35a128fcdf66c96a7aef1ed3c9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3434
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34306 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate |
1999-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b97abdee50e04514db7c7a5b6b3f836b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65ac675bbeff0850c273655bfb8e506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_637dc5a4e70ad954d18f5d419dc414bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48c512bf7f7f3824bbd0805791dc9492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4cd31e7520f0aed326c94923198e547 |
| publicationDate |
2000-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19958275-A1 |
| titleOfInvention |
Semiconductor laser and method of manufacturing the same |
| abstract |
A semiconductor laser is provided which comprises: a first cladding layer formed from a compound semiconductor having a first conductivity type impurity and having a mesa-shaped protrusion; an active layer formed on the protrusion like a strip and having side surfaces that are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer; buried layers formed on both sides of the protrusion and having a second conductivity type impurity; Current blocking layers, each having an end that is in contact with a virtual surface obtained by extending a side surface of the active layer upward, and that has a first facet that extends downward from one end and is about 55 degrees is inclined relative to the top surface of the first cladding layer, and is formed on each buried layer, and has the impurity of the first conductivity type; and second cladding layers formed on the current blocking layers and the active layer and containing the second conductivity type impurities. |
| priorityDate |
1998-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |