| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb1bb76a2cc461a44b69ef74be13814d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45f46de8384eb456a41ddc563a494f34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71100837fbdab9e24b5241d71da7447a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f95338ee0e8daf980c5d4acc1f9295c |
| publicationDate |
2001-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19953883-A1 |
| titleOfInvention |
Arrangement for reducing the on-resistance of p- or n-channel field effect transistors |
| abstract |
The invention relates to an arrangement for reducing the switch-on level of p- or n-channel field-effect transistors by high doping of the semiconductor substrate (1). To avoid misfit due to the high doping, the semiconductor substrate (1) is additionally doped with germanium or with carbon as compensation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8124983-B2 |
| priorityDate |
1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |