| abstract |
The invention relates to an arrangement for realizing a buried layer (2, 2 ') heavily doped with boron below a layer (3) which is also less doped with boron. In order to prevent misfit, germanium is additionally introduced into the layer (2, 2 ') heavily doped with boron as a compensation substance. In the case of a layer doped with arsenic or antimony, carbon is used for the compensation. |