http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19934153-A1

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filingDate 1999-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1138b2ba0a30394ba62d8d5a03c52aa
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publicationDate 2000-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-19934153-A1
titleOfInvention Insulating film for thin film structures
abstract The present invention relates to an insulating film of a thin film structure deposited on a substantially alkali metal free glass substrate having alternating structures of alumina and titanium oxide, and to an electroluminescent thin film device in which the insulating film is included as an insulating layer between the phosphor layer and the electrode layers is. In the insulating film, the ratio between the cumulative thicknesses of the titanium oxide and the aluminum oxide is less than 0.75, and, due to the ratio lower than in the prior art, good resistance to film tear is obtained.
priorityDate 1998-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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