| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 |
| filingDate |
1999-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b5e34ed24b9f619cd895965aaca8286 |
| publicationDate |
2000-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19904378-A1 |
| titleOfInvention |
Process for the production of nitride single crystals |
| abstract |
The process according to the invention takes advantage of the fact that small nitride crystallites of GaN or AlN are formed in solutions or melts which contain certain organic substances by thermal conversion and decomposition. In a vessel (1) containing the melt, which is kept at a first temperature T¶1¶, there is thus a substrate seed (2) made of the nitride to be formed, which is supplied with energy to a second temperature T¶2¶> T¶ 1¶ is heated. Epitaxial growth from the melt thus takes place on the surface of the substrate seed (2). The energy supply can take place in different ways. |
| priorityDate |
1999-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |