| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
1998-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95562d37a7afb3415d7b20ba194afad3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df49572f4caadb9790a795831d2e11f |
| publicationDate |
2000-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19857064-A1 |
| titleOfInvention |
Semiconductor arrangement and method for passivating the surface of a semiconductor material |
| abstract |
In a method for passivating the surface of a semiconductor material, which may have native semiconductor oxide on its surface, a solution is applied to the surface of the semiconductor material which has polyfluorinated hydrocarbons with at least one acidic side group dissolved in a solvent. The solution applied to the semiconductor material is then dried at low temperatures. When using the method, the properties are retained in the inner volume region of the semiconductor material that is spaced from the surface. The semiconductor elements produced by the method have a low, time-stable and largely independent of the density generated or injected excess charge carrier recombination rate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10130801-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10130801-A1 |
| priorityDate |
1998-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |