http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19855924-B4

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
filingDate 1998-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a803af1fbe627caa1c36eab7b598364
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publicationDate 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-19855924-B4
titleOfInvention Manufacturing process for a compound
abstract A method of making connections used for a dielectric layer (202) having a metal contact (206) disposed therein, comprising the steps of: Forming a metal layer (212) on the dielectric layer (202); Applying a photoresist layer (218) to the metal layer (212) and etching the metal layer (212) such that a metal line (210) partially covering the metal contact is formed, and Removing the fat paint layer (218) using an oxygen plasma, Providing a pure water vapor plasma, wherein the flow of pure water vapor plasma is 300 to 500 sccm, and Treating the exposed metal contact with the pure water vapor plasma for 20 to 30 seconds, wherein a barrier layer (208) is formed between the dielectric layer (202) and the metal contact (206); forming a barrier layer (214) between the dielectric layer (202) and the metal layer (212); and an antireflection layer (216) is formed between the metal layer (212) and the photoresist layer (218).
priorityDate 1998-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.