http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19849743-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1998-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ed225a22fbdfd13ecd30f84f25011aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d1f90cb7b1d361add0c9a6d570615a3 |
| publicationDate | 2000-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-19849743-A1 |
| titleOfInvention | Method of making an embedded dynamic random access memory |
| abstract | A method of manufacturing an embedded DRAM enables memory circuit areas to be integrated with logic circuit areas so that their tops are at the same level. It therefore enables a high level of flatness in integrated circuits. The method includes depositing a layer of refractory metal oxide over a high aspect ratio via. Thereafter, a portion of the deposited high-melting metal oxide on the contact hole is converted from non-conductive to conductive material by selective treatment with a hydrogen plasma or with hot hydrogen. The high-melting metal oxide that has not been treated with a hydrogen plasma or hot hydrogen remains non-conductive. A non-conductive, high-melting metal oxide layer can be used as the dielectric layer for a DRAM capacitor. |
| priorityDate | 1998-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.