| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
1998-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c974c0a6fd4fcaa39e36b043e98cd4ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c14f9b3b96d45ca9261d30adbf2ac829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca2ae61307e8e4b4c5e2b02dd421ce91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a768b17cf92ce35c85a3162c34b2033e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_904153362298f836f8385e3a4c1c41fc |
| publicationDate |
1999-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19848444-A1 |
| titleOfInvention |
Selective metal film manufacturing process and capacitor manufacturing and via filling process using the same |
| abstract |
The invention relates to a method for selective metal layer production as well as to a capacitor production method and a contact hole filling method which use the selective metal layer production method. DOLLAR A According to the invention, a semiconductor substrate provided with an insulation film and a conductive layer is introduced into a reaction chamber and a purge gas is introduced for the selective metal layer production, then a sacrificial metal layer is selectively formed on the conductive layer by introducing a sacrificial metal source gas and the latter opposite one by introducing a metal halide gas that of the sacrificial metal atoms of lower halogen bond strength is replaced by a deposition metal layer. The method is particularly suitable as part of the formation of a lower capacitor electrode and for the selective application of an ohmic layer to the bottom of a contact hole in the context of a contact hole filling method. DOLLAR A use e.g. B. for the production of metal-insulator-silicon or metal-insulator-metal structures in capacitors of semiconductor components. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8212299-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10226381-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19929306-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8169013-B2 |
| priorityDate |
1998-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |