| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
1998-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d26781c0c711452950b75fe940695e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b45d2579e02a049b896ecc3c346ba2c0 |
| publicationDate |
2000-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-19838945-A1 |
| titleOfInvention |
Process for producing a low-defect, single-crystal silicon carbide layer |
| abstract |
The invention relates to a method for producing a low-defect, single-crystal, preferably large-area silicon carbide (SiC) layer on a substrate, preferably on a Si substrate, in particular for applications in power electronics and sensor technology. The method includes anodizing a porous surface layer (14) on the substrate (10), on which an SiC layer (16) is deposited from a gas phase with the starting materials Si and C in a carrier gas. Alternatively, it is possible to realize the deposition of the SiC layer (16) by means of molecular beam epitaxides. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7718469-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013256143-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005087983-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005087983-A3 |
| priorityDate |
1998-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |