http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19817481-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-468
filingDate 1998-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7297bc0ba670a9319a7c839cdaef4a39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0077403596259c40343d882a20a5cccf
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publicationDate 1999-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-19817481-A1
titleOfInvention PTC thermistor material and process for its manufacture
abstract The invention relates to the field of electrical engineering, electronics and relates to a PTC thermistor material, which can be used for example for heat conductor elements or sensors, and a method for its production. DOLLAR A The invention has for its object to provide a thermistor material and a method for its production, in which the sintering can be carried out at a significantly lower temperature. DOLLAR A The object is achieved by a process for producing a PTC thermistor material, in which a material based on doped (Ba¶x¶Pb¶1-x¶) TiO¶3¶ in the annealed state before and / or during grinding 0 , 2-8 mol% of a compound of boron and / or silicon, in the form of their nitrides or carbides, are added and the sintering is carried out after the grinding and shaping.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9532454-B2
priorityDate 1998-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.